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Filtros : "Pela, Ronaldo Rodrigues" Limpar

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  • Relatorio tecnico

    A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond (2017)

    Lucatto, Bruno; Pela, Ronaldo Rodrigues; Marques, Marcelo; Teles, Lara K.; Assali, L. V. C.

    Unidade: IF

    Subjects: SPINTRÔNICA, SEMICONDUTORES

    Acesso à fonteHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      LUCATTO, Bruno et al. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/abs/1705.10644. Acesso em: 06 maio 2024. , 2017

    • APA

      Lucatto, B., Pela, R. R., Marques, M., Teles, L. K., & Assali, L. V. C. (2017). A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/abs/1705.10644

    • NLM

      Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2024 maio 06 ] Available from: https://arxiv.org/abs/1705.10644

    • Vancouver

      Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. A general procedure for accurate defect excitation energies from DFT-1/2 band structures: the case of 'NV POT. -' center in diamond [Internet]. 2017 ;[citado 2024 maio 06 ] Available from: https://arxiv.org/abs/1705.10644

  • Artigo de periodico

    General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond (2017)

    Lucatto, Bruno; Pela, Ronaldo Rodrigues; Marques, Marcelo; Teles, Lara K; Assali, L. V. C.

    Source: PHYSICAL REVIEW B. Unidade: IF

    Subjects: SEMICONDUTORES, SPIN

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      LUCATTO, Bruno et al. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond. PHYSICAL REVIEW B, v. 96, n. 7, p. 075145, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.96.075145. Acesso em: 06 maio 2024.

    • APA

      Lucatto, B., Pela, R. R., Marques, M., Teles, L. K., & Assali, L. V. C. (2017). General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond. PHYSICAL REVIEW B, 96( 7), 075145. doi:10.1103/PhysRevB.96.075145

    • NLM

      Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond [Internet]. PHYSICAL REVIEW B. 2017 ; 96( 7): 075145.[citado 2024 maio 06 ] Available from: https://doi.org/10.1103/PhysRevB.96.075145

    • Vancouver

      Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond [Internet]. PHYSICAL REVIEW B. 2017 ; 96( 7): 075145.[citado 2024 maio 06 ] Available from: https://doi.org/10.1103/PhysRevB.96.075145
  • 1

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